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Topic: Science
Number of pages / Number of words: 4 / 887
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As for module

technology [Table 11, aiter trench isolation is done through

I-type isolation mask, W/ploy gate stack is formed. N H 3

annealed W gate and conventional stack W gate showed

similar R, result[l]. After selective oxidation is done,

nitride gate spacer is formed for self align contact (SAC)


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In the case of Epi-Si plug, because of its higher

thermal budget, landing plug is formed first prior to

SourceDrain formation for peripheral MOS Transistor.

Because channel engineering needs higher thermal budget

such as 1000 “C , transistor degradation during sourceldrain

56 0-7803-7312-X/02/$17...

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Hamlet and Isolation The Loneliness And Isolation Dram Shop Liability Law impact of double-stack train service on port of Seattle IMPACT OF ISOLATION Isolation And Loneliness Isolation Within The Scarlet Letter Isolation in Bartleby Isolation And The Individual I Isolation A 0.08p2-sized 8F2 Stack DRAM cell for multi-Gigabit DRAM I Have A Dram Isolation of Eugenol Intel Corporation: The DRAM Decision intro to networking and the tcp/ip stack

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