Buy custom A 0.08p2-sized 8F2 Stack DRAM cell for multi-Gigabit DRAM
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Essay's paper body
As for module
technology [Table 11, aiter trench isolation is done through
I-type isolation mask, W/ploy gate stack is formed. N H 3
annealed W gate and conventional stack W gate showed
similar R, result[l]. After selective oxidation is done,
nitride gate spacer is formed for self align contact (SAC)
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In the case of Epi-Si plug, because of its higher
thermal budget, landing plug is formed first prior to
SourceDrain formation for peripheral MOS Transistor.
Because channel engineering needs higher thermal budget
such as 1000 âC , transistor degradation during sourceldrain
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