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A second exposure through a mask is made, and after washing the chip with solvent an L-shaped pattern remains on the chip. Etching removes the polysilicon not shielded by the resist as well as a thin layer of dioxide, exposing two wells of the silicon base. The rest of the resist is then removed, so the gate rises above the wells...

The rest of the resist is then removed, so the gate rises above the wells. Doping transforms the two wells of p-type into n-type silicon, which carries only negative charge.

Electrical connections are now added to the circuit. Layers of

dioxide and resist are again deposited and a third masking is carried out...

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